Analysis and Research on the Surface Roughness of the Copper Multilayer Interconnection CMP in ULSI ULSI中多层Cu布线CMP表面粗糙度的分析和研究
Dishing problem of copper multilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed. 介绍了ULSI多层铜互连线中的碟形坑问题,对其产生的原因及影响因素进行了分析。
Chemical-mechanical polishing ( CMP) is widely used in planarization of silicon substrate and multilayer metal interconnection construction and becomes one of core technologies in ULSI fabrication. 在集成电路(IC)制造中,化学机械抛光(CMP)技术在单晶硅衬底和多层金属互连结构的层间全局平坦化方面得到了广泛应用,成为制造主流芯片的关键技术之一。
The package is a multilayer ceramic structure and has the electrical interconnection with logical function. 该封装为多层陶瓷结构,并具有电连接逻辑关系。
LTCC multilayer circuit strctures require the interconnection of signals between different layers which will restrict the overal performance of the circuit systems. This is of key importance in the design of LTCC circuit systems. LTCC多层电路结构要求实现信号的层间互连,互连的效果制约着电路系统的整体性能,是LTCC电路系统设计中的关键。